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EM6156K600V - 256Kx16 LP SRAM

General Description

The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Key Features

  • z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP. ) Standby current: -L/-LL version 20/2µA (TYP. ) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation z z z z Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage: 1.5V (MIN. ) Package: 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA z z z.

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Datasheet Details

Part number EM6156K600V
Manufacturer Eorex Corporation
File Size 270.45 KB
Description 256Kx16 LP SRAM
Datasheet download datasheet EM6156K600V Datasheet

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256Kx16 LP SRAM EM6156K600V Series GENERAL DESCRIPTION www.DataSheet4U.com The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6156K600V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6156K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) Single 2.7V ~ 3.