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EM6156K1600V - 256K x 16 LP SRAM

General Description

The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Key Features

  • z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP. ) Standby current: -L/-LL version 20/2µA (TYP. ) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation z z z z Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage: 1.5V (MIN. ) Package: 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA z z z.

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Datasheet Details

Part number EM6156K1600V
Manufacturer Eorex Corporation
File Size 278.57 KB
Description 256K x 16 LP SRAM
Datasheet download datasheet EM6156K1600V Datasheet

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Other Datasheets by Eorex Corporation

Part Number Description
EM6156K600V 256Kx16 LP SRAM
EM6128K1600V 128Kx8 LP SRAM
EM6128K800V 128Kx8 LP SRAM

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256Kx16 LP SRAM EM6156K600V Series GENERAL DESCRIPTION The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6156K600V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6156K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) Single 2.7V ~ 3.