PTB20176 transistor equivalent, 5 watts/ 1.78-1.92 ghz rf power transistor.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 1.
The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride.
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