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June 1999 PBL 386 21/2 Subscriber Line Interface Circuit Description The PBL 386 21/2 Subscriber Line Interface Circuit (SLIC) is a 90 V bipolar inte

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PGT 203 26 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • L-band DFB CW source monolithicly integrated with an Electro Absorptionmodul

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e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor int

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e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26

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May 1996 PBL 3853 Universal Speech Circuit Description The PBL 3853 is a biopolar integrated speech circuit with specific parameters making it highl

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PBL 385 41 November 1998 PBL 385 41 Universal Speech Circuit Description. PBL 38541 is a monolithic integrated speech transmission circuit for use i

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PGT 204 05 DFB/EA Laser Module for 10 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodula

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e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor inte

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e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor inte

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e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor inten

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e PTB 20195 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20195 is a class AB, NPN, common emitter RF power transistor int

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e PTB 20206 1.0 Watt, 470–860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A o

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e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor inten

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PTB 20248 0.7 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20248 is a class A, NPN, common emitter RF power transistor inte

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PTB 20249 2.5 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20249 is a class AB, NPN, common emitter RF power transistor int

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PTF 10052 35 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier appl

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e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mo

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PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel

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PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for G

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March 1997 www.DataSheet4U.com PBL 3798, PBL 3798/2 Subscriber Line Interface Circuit Description PBL 3798 is an analog Subscriber Line Interface Ci

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