Datasheet Details
| Part number | PTF10125 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 291.84 KB |
| Description | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
 PTF10125 Datasheet
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| Part number | PTF10125 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 291.84 KB |
| Description | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
PTF10125 Datasheet
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The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB.
It is rated at 135 watts minimum power outpt.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor.
| Part Number | Description |
|---|---|
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |