PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB.

It is rated at 135 watts minimum power outpt.

Ericsson

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Datasheet Details

Part number	PTF10125
Manufacturer	Ericsson
File Size	291.84 KB
Description	135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
Datasheet	PTF10125 Datasheet
Additional preview pages of the PTF10125 datasheet.

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PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.

Published: Apr 16, 2005 |