| Part number | PTF10122 |
|---|---|
| Datasheet | PTF10122_Ericsson.pdf |
| File Size | 263.23 KB |
| Manufacturer | Ericsson |
| Description | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
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The PTF 10122 is an internally matched mon source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
| Part Number | Description |
|---|---|
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
