Datasheet Details
| Part number | PTF10120 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 420.29 KB |
| Description | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
 PTF10120 Datasheet
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| Part number | PTF10120 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 420.29 KB |
| Description | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
PTF10120 Datasheet
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The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz.
It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor.
| Part Number | Description |
|---|---|
| PTF10122 | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |