• Part: PTF10120
  • Description: 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
  • Manufacturer: Ericsson
  • Size: 420.29 KB
Download PTF10120 Datasheet PDF
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Datasheet Summary

PTF 10120 120 Watts, 1.8- 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched mon source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. - - INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side mon Source Excellent Thermal Stability 100% Lot Traceability - - - - - Typical Output Power vs. Input Power 150 100 Output Power...