| Part number | PTF10100 |
|---|---|
| Datasheet | PTF10100_Ericsson.pdf |
| File Size | 163.98 KB |
| Manufacturer | Ericsson |
| Description | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
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The 10100 is an internally matched mon source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
| Part Number | Description |
|---|---|
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
