Datasheet4U Logo Datasheet4U.com

PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10107 is a 5

watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz.

It operates at 40% efficiency with 11 dB gain.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

Guaranteed Performance at 1.99

📥 Download Datasheet

Datasheet preview – PTF10107

Datasheet Details

Part number PTF10107
Manufacturer Ericsson
File Size 83.73 KB
Description 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10107 Datasheet
Additional preview pages of the PTF10107 datasheet.

📁 Similar Datasheet

  • PTF102003 - PUSH/PULL LATERAL MOSFET (PEAK)
  • PTF11A - Relay (Omron)
  • PTF13005 - NPN Silicon Power Transistor (Wing On)
  • PTF14A-E - Relay (Omron)
  • PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
  • PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
  • PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180601E - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180901E - GSM/EDGE RF Power FET (Infineon Technologies AG)
Other Datasheets by Ericsson
  • PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
  • PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
  • PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
  • PTF10119 - 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
  • PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
  • PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
  • PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
  • PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs. Input Power 8 100 Output Pow er Efficiency 60 Efficiency (%) X 80 Output Power (Watts) 7 6 5 4 3 2 1 0 0.0 A-1 101 234 07 569 845 VDD = 26 V IDQ = 70 mA f = 2.0 GHz 0.1 0.2 0.3 0.4 40 20 0 0.
Published: |