PTB20177 transistor equivalent, 150 watts/ 925-960 mhz cellular radio rf power transistor.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 1.
The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivatio.
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