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EM636165 - 1M x 16 Synchronous DRAM

Download the EM636165 datasheet PDF. This datasheet also covers the EM636165GD variant, as both devices belong to the same 1m x 16 synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Key Specifications.
  • Fast access time: 5/5.5 ns.
  • Fast clock rate: 166/143 MHz.
  • Self refresh mode: standard and low power.
  • Internal pipelined architecture.
  • 512K word x 16-bit x 2-bank.
  • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
  • Individual byte controlled by LDQM and UDQM.
  • Auto Refresh and Self Refresh.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EM636165GD_Etron.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
EtronTech EM636165 1Mega x 16 Synchronous DRAM (SDRAM) (Rev. 1.0, 10/2004) Features Key Specifications • Fast access time: 5/5.5 ns • Fast clock rate: 166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Individual byte controlled by LDQM and UDQM • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V±0.3V power supply • Interface: LVTTL • Component Type : Known Good Die EM636165 - 6/7/7L tCK3 tRAS tAC3 tRC Clock Cycle time(min.) Row Active time(max.) Access time from CLK(max.) Row Cycle time(min.