Datasheet4U Logo Datasheet4U.com

EM562161 Datasheet 128K x 16 Low Power SRAM

Manufacturer: Etron Technology

Overview: EtronTech.

📥 Download Datasheet

General Description

Symbol A0 - A16 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection A LB # O E# A0 A1 A2 CE 2 B DQ 8 UB # A3 A4 CE1 # DQ 0 C DQ 9 DQ 1 0 A5 A6 DQ 1 DQ 2 D GN D DQ 1 1 NC A7 DQ 3 VD D E V DD DQ 1 2 NC A 16 DQ 4 G ND F DQ 1 4 DQ 1 3 A 14 A 15 DQ 5 DQ 6 Overview The EM562161 is a 2,097,152-bit SRAM organized as 131,072 words by 16 bits.

It is designed with advanced CMOS technology.

This Device operates from a single 2.7V to 3.6V power supply.

Key Features

  • Single power supply voltage of 2.7V to 3.6V.
  • Power down features using CE1# and CE2.
  • Low operating current : 30mA(max for 55 ns).
  • Maximum Standby current : 10µA at 3.6 V.
  • Data retention supply voltage: 1.5V to 3.6V.
  • Direct TTL compatibility for all input and output.
  • Wide operating temperature range: -40°C to 85°C.
  • Package type: 48-ball TFBGA, 6x8mm EM562161 128K x 16 Low Power SRAM Preliminary, Rev 1.0 07/2001 circuit tec.

More Datasheets from Etron Technology

Part Number Description
EM562081 256K x 8 Low Power SRAM
EM565168 512K x 16 Pseudo SRAM
EM566169BC 1M x 16 Pseudo SRAM
EM567168 2M x 16 Pseudo SRAM
EM567169BC 2M x 16 Pseudo SRAM
EM584161 256K x 16 Low Power SRAM