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Etron Technology

EM68B16DVAA Datasheet Preview

EM68B16DVAA Datasheet

32M x 16 Mobile DDR Synchronous DRAM

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EtronTech
EM68B16DVAA
32M x 16 Mobile DDR Synchronous DRAM (SDRAM)
Etron Confidential
Advanced (Rev. 1.0 Mar. /2009)
Features
Fast clock rate: 166/133 MHz
Differential Clock CK & CK
Bi-directional DQS
Four internal banks, 8M x 16-bit for each bank
Edge-aligned with read data, centered in write data
Programmable Mode and Extended Mode Registers
- CAS Latency: 2, or 3
- Burst length: 2, 4, 8, or 16
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
Individual byte writes mask control
DM Write Latency = 0
Precharge Standby Current = 300 µA
Self Refresh Current = 700 µA
Deep power-down Current = 10 µA max. at 85
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
No DLL (Delay Lock Loop), to reduce power; CK to
DQS is not synchronized.
Power supplies: VDD & VDDQ = +1.8V+0.15V/-0.1V
Interface: LVCMOS
Ambient Temperature TA = -25 ~ 85 ,
60-ball 8mm x 10mm VFBGA package
- Pb free and Halogen free
Table 1. Ordering Information
Part Number
Clock
Frequency
Data Rate
IDD6 Package
EM68B16DVAA-6H 166MHz 333Mbps/pin 700 µA VFBGA
EM68B16DVAA-75H 133MHz 266Mbps/pin 700 µA VFBGA
VA: indicates VFBGA package
A: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
123 789
A VSS DQ15 VSSQ
VDDQ DQ0 VDD
B VDDQ. DQ13 DQ14
C VSSQ DQ11 DQ12
DQ1 . DQ2 VSSQ
DQ3 DQ4 VDDQ
D VDDQ DQ9 DQ10
DQ5 DQ6 VSSQ
E VSSQ UDQS DQ8
DQ7 LDQS VDDQ
F VSS UDM NC
NC LDM VDD
G CKE CK
CK
WE CAS RAS
H A9 A11 A12
CS BA0 BA1
J A6 A7 A8
A10/AP A0
A1
K VSS
A4
A5
A2 A3 VDD
Overview
The EM68B16D is 536,870,912 bits of double data
rate synchronous DRAM organized as 4 banks of
8,388,608 words by 16 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68B16D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.




Etron Technology

EM68B16DVAA Datasheet Preview

EM68B16DVAA Datasheet

32M x 16 Mobile DDR Synchronous DRAM

No Preview Available !

EtronTech
Figure 2. Block Diagram
CK
CK
CKE
CS
RAS
CAS
WE
A10/AP
CLOCK
BUFFER
COMMAND
DECODER
COLUMN
COUNTER
PASR, DS
EXTENDED
MODE
REGISTER
SELF REFRESH
LOGIC & TIMER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
A0
A9
A11
BA0
BA1
ADDRESS
BUFFER
REFRESH
COUNTER
LDQS
UDQS
DQ0
DQ15
DATA
STROBE
BUFFER
DQ
Buffer
LDM
UDM
EM68B16DVAA
8M x 16
CELL ARRAY
(BANK #0)
Column Decoder
8M x 16
CELL ARRAY
(BANK #1)
Column Decoder
8M x 16
CELL ARRAY
(BANK #2)
Column Decoder
8M x 16
CELL ARRAY
(BANK #3)
Column Decoder
Etron Confidential
2
Rev. 1.0
Mar. 2009


Part Number EM68B16DVAA
Description 32M x 16 Mobile DDR Synchronous DRAM
Maker Etron Technology
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