• Part: EM68B16DVAA
  • Description: 32M x 16 Mobile DDR Synchronous DRAM
  • Manufacturer: Etron Technology
  • Size: 319.00 KB
Download EM68B16DVAA Datasheet PDF
Etron Technology
EM68B16DVAA
EM68B16DVAA is 32M x 16 Mobile DDR Synchronous DRAM manufactured by Etron Technology.
Features - Fast clock rate: 166/133 MHz - Differential Clock CK & CK - Bi-directional DQS - Four internal banks, 8M x 16-bit for each bank - Edge-aligned with read data, centered in write data - Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, 8, or 16 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature pensated Self Refresh) - DS (Drive Strength) - Individual byte writes mask control - DM Write Latency = 0 - Precharge Standby Current = 300 µA - Self Refresh Current = 700 µA - Deep power-down Current = 10 µA max. at 85 - Auto Refresh and Self Refresh - 8192 refresh cycles / 64ms - No DLL (Delay Lock Loop), to reduce power; CK to DQS is not synchronized. - Power supplies: VDD & VDDQ = +1.8V+0.15V/-0.1V - Interface: LVCMOS - Ambient...