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FLC097WF Datasheet Preview

FLC097WF Datasheet

C-Band Power GaAs FET

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FEATURES
• High Output Power: P1dB = 28.8dBm (Typ.)
• High Gain: G1dB = 8.5dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC097WF
C-Band Power GaAs FET
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
+15
-5
4.16
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 200mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =15mA
IGS = -15µA
-1.0
-5
Limit
Typ. Max.
300 450
150 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
27.5 28.8 -
7.5 8.5 -
Power-added Efficiency
ηadd
- 35 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WF
Rth Channel to Case
- 25 36
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1




Eudyna Devices

FLC097WF Datasheet Preview

FLC097WF Datasheet

C-Band Power GaAs FET

No Preview Available !

FLC097WF
C-Band Power GaAs FET
POWER DERATING CURVE
5
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
4
3
2
1
0 50 100 150 200
Case Temperature (°C)
300 VGS =0V
-0.5V
200
-1.0V
100 -1.5V
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
24 f1 = 6.0 GHz
22
f2 = 6.01GHz
2-tone Test
20 Pout
18
IM3
16
-10
-20
-30
-40
14 -50
6 8 10 12 14
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
4 GHz
28 IDS 0.6 IDSS
26
Pout 6 GHz
24
22
4 GHz
20 ηadd 6 GHz
18
16
50
40
30
20
10
10 12 14 16 18 20
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6GHz
IDS 0.6 IDSS
29 P1dB
28
ηadd
27
50
40
30
8 9 10
Drain-Source Voltage (V)
2


Part Number FLC097WF
Description C-Band Power GaAs FET
Maker Eudyna Devices
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