FLC097WF
FEATURES
- High Output Power: P1d B = 28.8d Bm (Typ.)
- High Gain: G1d B = 8.5d B(Typ.)
- High PAE: ηadd = 35%(Typ.)
- Proven Reliability
- Hermetic Metal/Ceramic Package
C-Band Power Ga As FET
DESCRIPTION
The FLC097WF is a power Ga As FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna remends the following conditions for the reliable operation of Ga As FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 m A respectively with gate resistance of 400Ω. 3. The operating...
