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Excelics Semiconductor

EIC7785-4 Datasheet Preview

EIC7785-4 Datasheet

Internally Matched Power FET

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UPDATED 08/21/2007
EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
FEATURES
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1100mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1100mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1100mA
f = 7.70-8.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 8.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
35.5 36.5
dBm
7.5 8.5
dB
±0.6
dB
34
1100
1300
%
mA
-43 -46
dBc
2000
-2.5
5.5
2500
-4.0
6.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
48mA
Igr Reverse Gate Current
-9.6mA
Pin Input Power
36dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




Excelics Semiconductor

EIC7785-4 Datasheet Preview

EIC7785-4 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-4
7.70-8.50GHz 4-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1100mA
S11 and S22
Swp Max
8.7GHz
3.0
4.0
5.0
10.0
-0.2
-0.4
S[1,1]
EIC7785-4
S[2,2]
EIC7785-4
Swp Min
7.5GHz
20
10
0
-10
-20
-30
7.5
S21 and S12
DB(|S[2,1]|)
EIC7785-4
DB(|S[1,2]|)
EIC7785-4
7.8 8.1 8.4
Frequency (GHz)
8.7
FREQ
(GHz)
7.5
7.6
7.7
7.8
7.9
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
--- S11 ---
MAG
ANG
0.6034
0.5516
0.4935
0.4264
0.3594
0.29
0.2323
0.1942
0.1858
0.2013
0.2311
0.2635
0.2953
-149.14
-159.75
-172.49
173.09
156.04
135.54
109.56
77.04
42.24
9.94
-14.73
-35.41
-51.98
--- S21 ---
MAG
ANG
2.6409
2.7534
2.8842
2.9901
3.0911
3.152
3.1785
3.1614
3.0973
3.0181
2.9014
2.7724
2.6626
-81.54
-93.4
-105.71
-118.6
-132.17
-146.09
-159.96
-174.31
171.66
157.94
144.33
131.4
119.31
--- S12 ---
MAG
ANG
0.0862
0.0948
0.1006
0.1076
0.1154
0.1203
0.1233
0.1262
0.1277
0.1256
0.1242
0.1232
0.1178
-138.31
-149.69
-161.26
-174.38
172.85
159.84
146.34
132.54
118.21
105.29
92.6
79.73
66.75
--- S22 ---
MAG
ANG
0.5314
0.5287
0.5183
0.5005
0.4752
0.4444
0.4117
0.3812
0.3633
0.3511
0.3517
0.3594
0.3726
32.49
20.36
7.57
-6.22
-21.19
-37.73
-56.07
-75.72
-96.19
-117.08
-137.38
-155.44
-171.45
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007


Part Number EIC7785-4
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC7785-4 Datasheet PDF





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