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Excelics Semiconductor

EIC7785-5 Datasheet Preview

EIC7785-5 Datasheet

Internally Matched Power FET

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UPDATED 08/21/2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
FEATURES
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-49 dBc IM3 at PO = 26.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1600mA
f = 7.70-8.50GHz
Drain Current at 1dB Compression
f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 8.50GHz
Opt-01
Opt-02
Saturated Drain Current VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
36.5
7.5
-42
-46
TYP
37.5
8.5
34
1600
-45
-49
2900
-2.5
5.0
MAX
±0.6
1900
UNITS
dBm
dB
dB
%
mA
dBc
3500
-4.0
5.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf
Forward Gate Current
68mA
Igr
Reverse Gate Current
-13.6mA
Pin
Input Power
37dBm
Tch Channel Temperature 175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation 27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175C
-65C to +175C
27W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




Excelics Semiconductor

EIC7785-5 Datasheet Preview

EIC7785-5 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1600mA
S11 and S22
Swp Max
8.7GHz
3.0
4.0
5.0
10.0
10
0
-10
S21 andS12
DB(|S[2,1]|)
EIC7785-5
DB(|S[1,2]|)
EIC7785-5
-0.2
-0.4
S[1,1]
EIC7785-5
S[2,2]
EIC7785-5
Swp Min
7.5GHz
-20
-30
7.5
7.8 8.1 8.4
Frequency (GHz)
8.7
FREQ
(GHz)
7.5
7.6
7.7
7.8
7.9
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
--- S11 ---
MAG
ANG
0.6072
0.5668
0.5301
151.65
139.93
127.41
0.4896
0.4497
0.4085
113.26
98.49
82.47
0.3689
0.331
0.2961
64.87
45.51
23.89
0.2689
0.2517
0.2485
-0.24
-26.44
-54.31
0.2603
-81
--- S21 ---
MAG
ANG
2.4887
2.5636
2.6446
-96.64
-108.26
-120.35
2.7096
2.7726
2.8207
-132.52
-145.04
-157.79
2.8563
2.8892
2.888
-170.82
175.98
162.68
2.8767
2.8389
2.7741
149.22
135.66
122.25
2.7202
108.74
--- S12 ---
MAG
ANG
0.0877
0.0935
0.0984
-140.79
-152.21
-164.2
0.1039
0.1085
0.1123
-176.06
171.35
158.96
0.1168
0.1211
0.1237
146.5
133.84
121.11
0.1251
0.1254
0.1254
107.74
94.86
81.38
0.1226
67.75
--- S22 ---
MAG
ANG
0.3974
0.399
0.3981
63.69
51.15
38.7
0.392
0.378
0.3592
26.7
14.39
1.76
0.3329
0.3001
0.2676
-11.65
-26.37
-43.46
0.2323
0.2034
0.1942
-63
-87.46
-116.35
0.2049 -145.47
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007


Part Number EIC7785-5
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC7785-5 Datasheet PDF





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