EIC7785-8 Datasheet | Excelics Semiconductor

.. UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET Features - - - - - - - 7.70- 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 8.5 d B Power Gain at 1d B pression 34% Power Added Efficiency -46 d Bc IM3 at PO = 28.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 2200m A f = 7.70-8.50GHz Drain Current at 1d B pression f = 7.70-8.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.5 7.5 TYP 39.5 8.5 ±0.6 34 2200 -43 -46 4000 -2.5 3.5 4500 -4.0 4.0 o UNITS d Bm d B d B % 2600 m A d Bc m A V C/W VDS = 3 V, IDS = 40 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...