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EID1415A1-12 Datasheet Preview

EID1415A1-12 Datasheet

14.40-15.35 GHz 12-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
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EID1415A1-12
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
FEATURES
14.40-15.35 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1415A1-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 14.40-15.35GHz
Id1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 60 mA
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
40.0 41.0
dBm
5.0 6.0
dB
±0.6 dB
25 %
3800 4800
mA
6000 8000
mA
-1.2 -2.5
V
2.2 2.5 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1415A1-12 Datasheet Preview

EID1415A1-12 Datasheet

14.40-15.35 GHz 12-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
EID1415A1-12
UPDATED 07/12/2007
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Igsf
Igsr
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
15V
-5V
135
-21
10V
-4.5V
45mA
-7
Pin Input Power
40dBm
@ 3dB Compression
Tch Channel Temperature
175 oC
175 oC
Tstg
Storage Temperature
-65 to +175 oC
-65 to +175 oC
Pt Total Power Dissipation
60W
60W
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT
= (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 3200mA
S11 and S22
Swp Max
16.5GHz
S21 and S12
20
-3.0
-4.0
-5.0
-10.0
-0.2
S[1,1] *
EI-D0.41415_12
S[2,2] *
EID1415_12
3.0
4.0
5.0
10.0
0.2
0.4
Swp Min
13.5GHz
0
-20
-40
14
DB(|S[2,1]|) *
EID1415_12
DB(|S[1,2]|) *
EID1415_12
14.5 15 15.5
Frequency (GHz)
16
FREQ
(GHz)
13.50
13.75
14.00
14.25
14.50
14.75
15.00
15.25
15.50
15.75
16.00
--- S11 ---
MAG
ANG
0.775
11.290
0.717
-5.020
0.635
-23.800
0.524
-45.990
0.378
-72.060
0.229 -103.790
0.106 -153.980
0.085
102.660
0.151
47.090
0.200
10.580
0.222
-23.750
--- S21 ---
MAG
ANG
1.415
9.610
1.579
-10.630
1.786
-33.500
1.985
-58.350
2.140
-85.100
2.226 -112.700
2.248 -140.510
2.199 -167.310
2.140
166.000
2.054
139.280
1.955
112.660
--- S12 ---
MAG
ANG
0.025
35.410
0.028
6.450
0.033
-21.300
0.039
-52.540
0.044
-86.110
0.047 -117.710
0.051 -146.950
0.050 -178.820
0.046
150.110
0.043
117.830
0.039
77.460
--- S22 ---
MAG
ANG
0.521
102.860
0.492
87.150
0.453
69.220
0.407
49.100
0.346
25.420
0.273
-3.070
0.210
-37.440
0.171
-80.600
0.183 -129.030
0.232 -169.440
0.303
160.700
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID1415A1-12
Description 14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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