EID1415A1-8 - 14.40-15.35 GHz 8-Watt Internally-Matched Power FET

Excelics Semiconductor

Key Features

14.40-15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH.

EID1415A1-8 14.40-15.35 ghz 8-watt internally-matched power fet by Excelics Semiconductor - Datasheet Preview

Datasheet Details

Part number	EID1415A1-8
Manufacturer	Excelics Semiconductor
File Size	200.35 KB
Description	14.40-15.35 GHz 8-Watt Internally-Matched Power FET
Datasheet	EID1415A1-8 Datasheet

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www.DataSheet4U.com EID1415A1-8 UPDATED 11/12/2007 14.40-15.35GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • 14.40-15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Caution! ESD sensitive device. MIN 38.5 5.5 TYP 39.5 6.5 ±0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o MAX UNITS dBm dB dB % mA mA V C/W Output Power at 1dB Compression f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f =14.40-15.