EID1415A1-8 Datasheet | Excelics Semiconductor

FEATURES - - - - - - 14.40-15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Caution! ESD sensitive device. MIN 38.5 5.5 TYP 39.5 6.5 ±0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o UNITS d Bm d B d B % m A m A V C/W Output Power at 1d B pression f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f =14.40-15.35GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f =14.40-15.35GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96.0m A -19.2m A 38.5d Bm 175C -65C to +175C 37.5W CONTINUOUS2 10V -4V 28.8m A -4.8m A @ 3d B pression 175C -65C to +175C 37.5W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised November 2007 .. UPDATED 11/12/2007 14.40-15.35GHz 8-Watt Internally-Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 2200m A S11 and S22 0....