Datasheet Details
| Part number | EMB03N03HR |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 371.75 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB03N03HR-ExcellianceMOS.pdf |
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Overview: EMB03N03HR Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMB03N03HR |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 371.75 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB03N03HR-ExcellianceMOS.pdf |
|
|
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: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.0mΩ ID @TC=25℃ 115A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA pliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TA = 25 °C TA = 70 °C L = 0.1mH L = 0.05mH Power Dissipation1 TC = 25 °C TC = 100 °C Power Dissipation1 TA= 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 115 76 21 16 243 58 168 84 74 29 2.2 1.4 -55 to 150 ◆100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL= 40A, Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 1.7 Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 20 56 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
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|---|---|
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