EMB03N03V Overview
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
| Part number | EMB03N03V |
|---|---|
| Datasheet | EMB03N03V-ExcellianceMOS.pdf |
| File Size | 876.39 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB03N03A | MOSFET |
| EMB03N03H | MOSFET |
| EMB03N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03N06HS | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03P03A | MOSFET |
| EMB03P03H | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HS | MOSFET |