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EMB03N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB03N03V
Manufacturer Excelliance MOS
File Size 876.39 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 3.0mΩ ID 37A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS =37A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.
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