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EMB03N03HR - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.0mΩ ID @TC=25℃ 115A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source V

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Datasheet Details

Part number EMB03N03HR
Manufacturer Excelliance MOS
File Size 371.75 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB03N03HR Datasheet

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EMB03N03HR Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.0mΩ ID @TC=25℃ 115A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TA = 25 °C TA = 70 °C L = 0.1mH L = 0.