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EMB09N03V Excelliance MOS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS
Description N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalan...
Features r. 4Guarantee by Engineering test 2020/3/2 A.2 LIMITS ±20 44 12 44 127 28 39.2 19.6 83.3 33.3 2.3 0.9 -55 to 150 MAXIMUM 1.5 55 UNIT V A mJ W W ℃ UNIT °C / W P.1 EMB09N03V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gat...

Datasheet PDF File EMB09N03V Datasheet 446.02KB

EMB09N03V   EMB09N03V   EMB09N03V  




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