EMB09N03G Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
EMB09N03G datasheet by Excelliance MOS.
| Part number | EMB09N03G |
|---|---|
| Datasheet | EMB09N03G-ExcellianceMOS.pdf |
| File Size | 185.80 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB09N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09N03VAT | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09A03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09A03VP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09A3HP | MOSFET |
| EMB09K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB09K03VP | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |