Datasheet Details
| Part number | EMB09N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 446.02 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMB09N03V Datasheet
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| Part number | EMB09N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 446.02 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMB09N03V Datasheet
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: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TA = 25 °C TC = 100 °C L = 0.1mH L = 0.05mH Power Dissipation1 TC = 25 °C TC = 100 °C Power Dissipation1 TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test 2020/3/2 A.2 LIMITS ±20 44 12 44 127 28 39.2 19.6 83.3 33.3 2.3 0.9 -55 to 150 MAXIMUM 1.5 55 UNIT V A mJ W W ℃ UNIT °C / W P.1 EMB09N03V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 44 VGS = 10V, ID = 12A VGS = 4.5V, ID = 8A VDS = 5V, ID = 12A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resistance4,5 Total Gate Charge1,2,5 Gate-Source Charge1,2,5 Gate-Drain Charge1,2,5 Turn-On Delay Time1,2,5 Rise Time1,2,5 Turn-Off Delay Time1,2,5 Fall Time1,2,5 C
EMB09N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
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|---|---|
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