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EMB20N03VL Datasheet

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Excelliance MOS · EMB20N03VL File Size : 839.13KB · 10 hits

Features and Benefits

d by maximum junction temperature. 2Duty cycle  1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 6 °C / W 50 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Ga.

EMB20N03VL EMB20N03VL EMB20N03VL
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N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMB20N03V
EMB20N03VAA
EMB20N03VAT
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