Datasheet Details
| Part number | EMB20N03VZ |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 387.28 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB20N03VZ Download (PDF) |
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| Part number | EMB20N03VZ |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 387.28 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB20N03VZ Download (PDF) |
|
|
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: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 30.0mΩ ID @TC=25℃ 22.0A ID @TA=25℃ 7.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=11A, Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 360°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test 2020/4/20 A.0 EMB20N03VZ LIMITS ±20 22 22 7 6 70 18 16.2 8.1 62.5 25 2.1 1.3 -55 to 150 UNIT V A mJ W W °C MAXIMUM 2 60 UNIT °C/W P.1 EMB20N03VZ ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current4 IDSS VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 22 Drain-Source On-State Resistance1,4 RDS(ON) VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A Forward Transconductance1 gfs VDS = 5V, ID = 8A DYNAMIC Input Capacitance5 Ciss Output Capacitance5 Coss Reverse Transfer Capacitance5
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB20N03V | N-Channel MOSFET |
| EMB20N03VAA | MOSFET |
| EMB20N03VAT | MOSFET |
| EMB20N03VL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N03A | MOSFET |
| EMB20N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N03Q | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N06E | MOSFET |
| EMB20D03H | MOSFET |
| EMB20P03A | MOSFET |