EMB20N03VL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB20N03VL
Manufacturer	Excelliance MOS
File Size	839.13 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB20N03VL Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ ID@TC=25°C 22A Single N‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate‐Source Voltage Continuous Drain Current TC = 25 °C TA = 25 °C Pulsed Drain Current1 TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, IAS=10A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range SYMBOL VGS ID IDM IAS EAS EAR PD PD Tj, Tstg EMB20N03VL LIMITS ±20 12 9 9 88 10 5 2.5 20.8 8.3 2.