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EMB9930G - 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB9930G
Manufacturer Excelliance MOS
File Size 214.60 KB
Description 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor
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2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5A ‐4.5A EMB9930G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 5.5 ‐4.5 4.6 ‐3.8 22 ‐18 1.38 0.75 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.
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