EMB99A0G Overview
2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 390°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
EMB99A0G datasheet by Excelliance MOS.
| Part number | EMB99A0G |
|---|---|
| Datasheet | EMB99A0G-ExcellianceMOS.pdf |
| File Size | 213.95 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
|
|
2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 390°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB9930G | 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90A08G | MOSFET |
| EMB90N08A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90N08G | MOSFET |
| EMB90N08V | MOSFET |
| EMB90P06A | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90P06CS | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90P06G | MOSFET |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |