EMB99A0G - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMB99A0G
Manufacturer	Excelliance MOS
File Size	213.95 KB
Description	MOSFET
Datasheet	EMB99A0G Datasheet
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2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 250mΩ 300mΩ ID 2.2A ‐1.7A EMB99A0G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 2.2 ‐1.7 1.8 ‐1.4 8.8 ‐6.8 1.38 0.75 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.

Published: Apr 25, 2017 |