• Part: EMB9930G
  • Description: 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 214.60 KB
Download EMB9930G Datasheet PDF
Excelliance MOS
EMB9930G
EMB9930G is 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ 5.5A ‐4.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 ‐4.5 ‐3.8 ‐18 0.75 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL...