FBM80N70P
FBM80N70P is N-Channel Enhancement Mode MOSFET manufactured by FBM.
Features
- 70V/80A
RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V
- 100% avalanche tested
- Reliable and Rugged
- Lead Free and Green Devices Available
(Ro HS pliant)
Applications
- Switching application
- Power Management for Inverter Systems.
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
G N-Channel MOSFET
Ordering and Marking Information
FBM80N70
YYÿ XXXJWW G
FBM80N70
YYÿ XXXJWW G
Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device
Note: FBM lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. FBM lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. FBM defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
FBM reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to ob tain th e l atest version of rel evant inf ormation to verif y b ef ore pl acing ord ers.
1 150623
FBM80N70P/B
FBM@
Absolute Maximum Ratings
Symbol
Parameter
Rating mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
70 ±25 175 -55 to 175 80
IDM Pulsed Drain Current
- ID Continuous Drain...