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FBM80N70B - N-Channel Enhancement Mode MOSFET

Download the FBM80N70B datasheet PDF. This datasheet also covers the FBM80N70P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L D DS G TO-263-2L G N-Channel MOSFET Ordering and Marking Information S P FBM80N70 YYÿ XXXJWW G B FBM80N70 YYÿ XXXJWW G Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: FBM lead-free products contain molding compounds

Key Features

  • 70V/80A RDS(ON) = 6.0 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FBM80N70P-FBM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FBM80N70B
Manufacturer FBM
File Size 1.34 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet FBM80N70B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description DS G TO-220FB-3L D DS G TO-263-2L G N-Channel MOSFET Ordering and Marking Information S P FBM80N70 YYÿ XXXJWW G B FBM80N70 YYÿ XXXJWW G Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: FBM lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.