FBM85N80B - N-Channel Enhancement Mode MOSFET

Download the FBM85N80B datasheet PDF (FBM85N80P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode mosfet.

Description

DS G TO-220FB-3L D DS G TO-263-2L G N-Channel MOSFET Ordering and Marking Information S P FBM85N80 YYÿ XXXJWW G B FBM85N80 YYÿ XXXJWW G Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: FBM lead-free products contain molding compounds

Features

80V/90A RDS(ON) = 7.0 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

FBM85N80B n-channel enhancement mode mosfet by FBM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (FBM85N80P-FBM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	FBM85N80B
Manufacturer	FBM
File Size	1.45 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	FBM85N80B Datasheet

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Other Datasheets by FBM

FBM85N80P - N-Channel Enhancement Mode MOSFET
FBM80N70B - N-Channel Enhancement Mode MOSFET
FBM80N70P - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description DS G TO-220FB-3L D DS G TO-263-2L G N-Channel MOSFET Ordering and Marking Information S P FBM85N80 YYÿ XXXJWW G B FBM85N80 YYÿ XXXJWW G Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: FBM lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.

Published: Mar 13, 2017 |