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FKBB0208 Datasheet Dual N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBB0208
Manufacturer FETek
File Size 625.39 KB
Description Dual N-Channel MOSFET
Download FKBB0208 Download (PDF)

General Description

The FKBB0208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBB0208 meet the RoHS and Green Product requirement with full function reliability approved.

PRPAK3x3 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM PD@Tc=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 4.9 3.9 11 15.6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKBB0208 Dual N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 290mΩ ID 4.