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FKBB0208 Datasheet Preview

FKBB0208 Datasheet

Dual N-Ch 100V Fast Switching MOSFETs

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FETek Technology Corp.
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
FKBB0208
Dual N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS
100V
RDSON
290mΩ
ID
4.9A
General Description
The FKBB0208 is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The FKBB0208 meet the RoHS and Green
Product requirement with full function reliability
approved.
PRPAK3x3 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@Tc=25
ID@Tc=70
IDM
PD@Tc=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating
100
±20
4.9
3.9
11
15.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
80
8
Unit
/W
/W
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
1




FETek

FKBB0208 Datasheet Preview

FKBB0208 Datasheet

Dual N-Ch 100V Fast Switching MOSFETs

No Preview Available !

FETek Technology Corp.
FKBB0208
Dual N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=3A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=3A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=3A
VDD=50V , VGS=10V , RG=3.3
ID=3A
VDS=15V , VGS=0V , f=1MHz
Min.
100
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
260
270
---
---
---
---
5.5
2.5
9.6
1.83
1.85
1.4
30.6
11.2
6
508
29
16.4
Max.
---
290
320
3.0
10
100
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
4.9
11
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBB0208
Description Dual N-Ch 100V Fast Switching MOSFETs
Maker FETek
Total Page 4 Pages
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