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FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB2627 meet the RoHS and Green Product requirement with full function reliability approved.
FKBB2627
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 9mΩ
ID -48A
PRPAK3x3 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ PD@TC=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.