The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKBB0208
Dual N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 290mΩ
ID 4.9A
General Description
The FKBB0208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB0208 meet the RoHS and Green Product requirement with full function reliability approved.