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FKBB3115 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBB3115
Manufacturer FETek
File Size 451.63 KB
Description P-Channel MOSFET
Download FKBB3115 Download (PDF)

General Description

The FKBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

PRPAK3X3 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -30 ±20 -50 -32 -200 125 -50 38 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBB3115 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 8.