Datasheet Details
| Part number | FKCE2530 |
|---|---|
| Manufacturer | FETek |
| File Size | 744.99 KB |
| Description | N-Channel MOSFET |
| Download | FKCE2530 Download (PDF) |
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| Part number | FKCE2530 |
|---|---|
| Manufacturer | FETek |
| File Size | 744.99 KB |
| Description | N-Channel MOSFET |
| Download | FKCE2530 Download (PDF) |
|
|
|
DFN3.3x3.3 Pin Configuration The FKCE2530 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Rating 20 ±12 50 39 200 80 40 83 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
FKCE2530 N-Ch 20V Fast Switching MOSFETs Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology.
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