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FKD6002 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKD6002
Manufacturer FETek
File Size 567.90 KB
Description N-Channel MOSFET
Download FKD6002 Download (PDF)

General Description

The FKD6002 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKD6002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 17 12 50 11 15 42 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Advanced high cell density Trench technology FKD6002 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 60V.