Datasheet Details
| Part number | FKH6032 |
|---|---|
| Manufacturer | FETek |
| File Size | 684.64 KB |
| Description | N-Channel MOSFET |
| Download | FKH6032 Download (PDF) |
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| Part number | FKH6032 |
|---|---|
| Manufacturer | FETek |
| File Size | 684.64 KB |
| Description | N-Channel MOSFET |
| Download | FKH6032 Download (PDF) |
|
|
|
TO263 Pin Configuration The FKH6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKH6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-case 1 Rating 60 ±20 80 50 180 80 40 41 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
FKH6032 N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 60V 8.
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