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FKUC3107 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKUC3107
Manufacturer FETek
File Size 558.13 KB
Description P-Channel MOSFET
Download FKUC3107 Download (PDF)

General Description

The FKUC3107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKUC3107 meet the RoHS and Green Product requirement with full function reliability approved.

SOT23S Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State -30 ±20 -3.6 -3.2 -2.9 -2.5 -13 1.32 1 0.84 0.64 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKUC3107 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 70mΩ ID -3.