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FKUC3601 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKUC3601
Manufacturer FETek
File Size 516.63 KB
Description P-Channel MOSFET
Download FKUC3601 Download (PDF)

General Description

The FKUC3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKUC3601 meet the RoHS and Green Product requirement with full function reliability approved.

SOT23S Pin Configurations Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Rating -30 ±12 -4.3 -3.6 -20 1.4 0.9 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKUC3601 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 53mΩ ID -4.