Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V
(Typ:1.4mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and...