FNK03N02L datasheet, mosfet equivalent, FNK

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FNK03N02L Features and benefits

* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V (Typ:1.4mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .

FNK03N02L Application

General Features
* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V (Typ:1.4mΩ)
* High density cell design for ult.

FNK03N02L Description

The FNK03N02L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V (Typ:1.4mΩ)
* High .

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