FNK10N01 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V
(Typ1.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
General Features
* VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V
(Typ1.8mΩ)
* High density cell design for ul.
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