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FNK10N01-A - N-Channel Power MOSFET

Description

The FNK10N01-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =25V,ID =150A RDS(ON).

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Datasheet Details

Part number FNK10N01-A
Manufacturer FNK
File Size 1.25 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK10N01-A Datasheet

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Full PDF Text Transcription

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FNK10N01-A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N01-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.
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