FNK10N02C
FNK10N02C is N-Channel Power MOSFET manufactured by FNK.
Description
The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V
(Typ2.5mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching application
- Load switching
- Uninterruptible power supply
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
TO-251
- -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Limit
20 ±12
Drain...
