FNK10N02C Overview
The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK10N02C Key Features
- VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Load switching
- Uninterruptible power supply