FNK FNK10N02C
The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK10N02C |
|---|---|
| Datasheet | FNK10N02C Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V (Typ2.5mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N02C FNK10N02C TO-251 - -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 20 ±12 Drain Current-Con
