FNK10N02 Description
The FNK10N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK10N02 Key Features
- VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Load switching
- Uninterruptible power supply