FNK FNK10N01
The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK10N01 |
|---|---|
| Datasheet | FNK10N01 Download |
| Manufacturer |  FNK |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application
● Power switching application
● Load switching
● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N01 FNK10N01 DFN5*6-8L - -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 20 ±12 Drain Current-Continuous
