FNK10N01
FNK10N01 is N-Channel Enhancement Mode Power MOSFET manufactured by FNK.
Description
The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V
(Typ1.8mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Marking and pin assignment
Schematic diagram
Top View
DFN5X6 Bottom View
Application
- Power switching application
- Load switching
- Uninterruptible power supply
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
DFN5- 6-8L
- -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Limit
20 ±12
Drain Current-Continuous...
